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Sapphire Substrates

Sapphire Single Crystal Sapphire substrates are ideal for epitaxial deposition of GaN and other III-V and II-VI thin-films for use in the manufacture of bright blue and green LED's. C-axis [0001] oriented wafers are available in the sizes shown below. One side is highly polished to 1 nm or less and the second side is either fine ground or optically polished. The parts are available in lots of 10 or 25 in cassettes packaged in Class-100 clean room under nitrogen and are EPI ready.

Sapphire Substrates are custom fabricated to order and typically require a 1 week lead time.



Specifications:
50.8mm Dia76.2mm Dia
CrystalSingle crystal SapphireSingle crystal Sapphire
Sapphire Purity>99.9%>99.9%
Orientation[0001] C-axis, +/- 0.2 deg.[0001] C-axis, +/- 0.2 deg.
Dia. Tol.+/- 0.25mm, fine grind OD+/- 0.25mm, fine grind OD
Thickness0.332 mm0.550 mm
0.432 mm
Thickness Tol.+/- 0.25mm+/- 0.25mm
Primary Flat[1120] A-axis +/- 0.3 deg.[1120] A-axis +/- 0.3 deg.
Flat length16.0 +/- 1.5mm22.0 +/- 1.5mm
Front side SurfaceEPI polish, (Ra)< or = 1 nmEPI polish, (Ra)< or = 1 nm
Back side SurfaceFine Ground, R max 5-10 umFine Ground, R max 5-10 um
Optically Polished 80-50Optically Polished 80-50
TTV< 25 um< 30 um
BOW< 20 um< 30 um
Laser markupon requestupon request
PackagingVacuum packed cassette, classVacuum packed cassette, class
100 clean room, under nitrogen100 clean room, under nitrogen
CleanlinessEPI readyEPI ready

Sapphire Substrates are custom fabricated to order and typically require a 1 week lead time. Quantity discounts are available. Contact Us for more information. substrates