Sapphire Substrates

SAPPHIRE_SUBSTRATES_full

Sapphire Single Crystal Sapphire substrates are ideal for epitaxial deposition of GaN and other III-V and II-VI thin-films for use in the manufacture of bright blue and green LED’s. C-axis [0001] oriented wafers are available in the sizes shown below. One side is highly polished to 1 nm or less and the second side is either fine ground or optically polished. The parts are available in lots of 10 or 25 in cassettes packaged in Class-100 clean room under nitrogen and are EPI ready.

Sapphire Substrates are custom fabricated to order and typically require a 1 week lead time.


View Category Specifications

Specifications:
50.8mm Dia 76.2mm Dia
Crystal Single crystal Sapphire Single crystal Sapphire
Sapphire Purity >99.9% >99.9%
Orientation [0001] C-axis, +/- 0.2 deg. [0001] C-axis, +/- 0.2 deg.
Dia. Tol. +/- 0.25mm, fine grind OD +/- 0.25mm, fine grind OD
Thickness 0.332 mm 0.432 mm 0.550 mm
Thickness Tol. +/- 0.25mm +/- 0.25mm
Primary Flat [1120] A-axis +/- 0.3 deg. [1120] A-axis +/- 0.3 deg.
Flat length 16.0 +/- 1.5mm 22.0 +/- 1.5mm
Front side Surface EPI polish, (Ra)< or = 1 nm EPI polish, (Ra)< or = 1 nm
Back side Surface Fine Ground, R max 5-10 um

Optically Polished 80-50

Fine Ground, R max 5-10 um

Optically Polished 80-50

TTV < 25 um < 30 um
BOW < 20 um < 30 um
Laser mark upon request upon request
Packaging Vacuum packed cassette, class 100 clean room, under nitrogen Vacuum packed cassette, class 100 clean room, under nitrogen
Cleanliness EPI ready EPI ready



Sapphire Substrates are custom fabricated to order and typically require a 1 week lead time. Quantity discounts are available. Contact Us for more information.

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